Discrete Semiconductor Products
FDC2612
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 200 V, 1.1 A, 0.605 OHM, SOT-23, SURFACE MOUNT
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Search across all available documentation for this part.
Discrete Semiconductor Products
FDC2612
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 200 V, 1.1 A, 0.605 OHM, SOT-23, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDC2612 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.1 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 11 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 234 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Rds On (Max) @ Id, Vgs | 725 mOhm |
| Supplier Device Package | SuperSOT™-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.12 | |
| 10 | $ 0.70 | |||
| 100 | $ 0.46 | |||
| 500 | $ 0.36 | |||
| 1000 | $ 0.32 | |||
| Digi-Reel® | 1 | $ 1.12 | ||
| 10 | $ 0.70 | |||
| 100 | $ 0.46 | |||
| 500 | $ 0.36 | |||
| 1000 | $ 0.32 | |||
| Tape & Reel (TR) | 3000 | $ 0.28 | ||
| 6000 | $ 0.26 | |||
| 9000 | $ 0.25 | |||
| 15000 | $ 0.24 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.98 | |
| 10 | $ 0.64 | |||
| 25 | $ 0.57 | |||
| 50 | $ 0.50 | |||
| 100 | $ 0.44 | |||
| 250 | $ 0.39 | |||
| 500 | $ 0.35 | |||
| ON Semiconductor | N/A | 1 | $ 0.26 | |
Description
General part information
FDC2612 Series
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.
Documents
Technical documentation and resources
