FDC2612 Series

N-Channel PowerTrench® MOSFET 200V 1.1A, 725mΩ

Catalog

N-Channel PowerTrench® MOSFET 200V 1.1A, 725mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)
ON Semiconductor FDC2612	11 nC	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C	234 pF	MOSFET (Metal Oxide)	725 mOhm	Surface Mount	SuperSOT™-6	4.5 V	200 V	10 V	1.1 A	N-Channel	20 V
ON Semiconductor FDC2612_F095	11 nC	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C	234 pF	MOSFET (Metal Oxide)	725 mOhm	Surface Mount	SuperSOT™-6	4.5 V	200 V	10 V	1.1 A	N-Channel	20 V

Catalog

N-Channel PowerTrench® MOSFET 200V 1.1A, 725mΩ

Key Features

• 1.1 A, 200V

• RDS(on)= 725 mΩ@ VGS= 10 V

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

• Fast switching speed

• Low gate charge (8nC typical)

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.