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TO-263
Discrete Semiconductor Products

NVBGS4D1N15MC

Obsolete
ON Semiconductor

MOSFET - SINGLE N-CHANNEL 150 V, 4.1 MΩ, 185 A

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TO-263
Discrete Semiconductor Products

NVBGS4D1N15MC

Obsolete
ON Semiconductor

MOSFET - SINGLE N-CHANNEL 150 V, 4.1 MΩ, 185 A

Technical Specifications

Parameters and characteristics for this part

SpecificationNVBGS4D1N15MC
Current - Continuous Drain (Id) @ 25°C20 A, 185 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs88.9 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds7285 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-263-7, D2PAK
Power Dissipation (Max)316 W, 3.7 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4.1 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 17.96
10$ 13.12
25$ 11.90
100$ 10.56
250$ 10.25
Digi-Reel® 1$ 17.96
10$ 13.12
25$ 11.90
100$ 10.56
250$ 10.25

Description

General part information

NVBGS4D1N15MC Series

Automotive Power MOSFET in a D2PAK package for efficient designs with high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.