NVBGS4D1N15MC Series

MOSFET - Single N-Channel 150 V, 4.1 mΩ, 185 A

Catalog

MOSFET - Single N-Channel 150 V, 4.1 mΩ, 185 A

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Qualification	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Grade
ON Semiconductor NVBGS4D1N15MC	3.7 W 316 W	4.5 V	AEC-Q101	MOSFET (Metal Oxide)	4.1 mOhm	8 V 10 V	20 V	Surface Mount	7285 pF	150 V	N-Channel	88.9 nC	-55 °C	175 ░C	20 A 185 A	TO-263 (D2PAK)	D2PAK TO-263-7	Automotive

Catalog

MOSFET - Single N-Channel 150 V, 4.1 mΩ, 185 A

Key Features

• Low RDS (on)

• Low QGand Capacitance

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Description

Automotive Power MOSFET in a D2PAK package for efficient designs with high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.