Discrete Semiconductor Products

IRF9540STRLPBF

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TRANS MOSFET P-CH 100V 19A 3-PIN(2+TAB) D2PAK T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET P-CH 100V 19A 3-PIN(2+TAB) D2PAK T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9540STRLPBF

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W, 3.7 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Vishay General Semiconductor - Diodes Division IRF9540STRLPBF	-55 °C	175 ░C	19 A	4 V	3.7 W 150 W	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	61 nC	TO-263 (D2PAK)	100 V	200 mOhm	P-Channel	20 V	1400 pF	10 V	Surface Mount
Vishay General Semiconductor - Diodes Division IRF9540STRL	-55 °C	175 ░C	19 A	4 V	3.7 W 150 W	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	61 nC	TO-263 (D2PAK)	100 V	200 mOhm	P-Channel	20 V	1400 pF	10 V	Surface Mount
Vishay General Semiconductor - Diodes Division IRF9540SPBF	-55 °C	175 ░C	19 A	4 V	3.7 W 150 W	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	61 nC	TO-263 (D2PAK)	100 V	200 mOhm	P-Channel	20 V	1400 pF	10 V	Surface Mount
Vishay General Semiconductor - Diodes Division IRF9540PBF-BE3	-55 °C	175 ░C	19 A	4 V	150 W	MOSFET (Metal Oxide)	TO-220-3	61 nC	TO-220AB	100 V	200 mOhm	P-Channel	20 V	1400 pF		Through Hole
Vishay General Semiconductor - Diodes Division IRF9540	-55 °C	175 ░C	19 A	4 V	150 W	MOSFET (Metal Oxide)	TO-220-3	61 nC	TO-220AB	100 V	200 mOhm	P-Channel	20 V	1400 pF	10 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 19A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources