IRF9540 Series

Catalog

TRANS MOSFET P-CH 100V 19A 3-PIN(2+TAB) D2PAK T/R

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Vishay General Semiconductor - Diodes Division IRF9540STRLPBF	-55 °C	175 ░C	19 A	4 V	3.7 W 150 W	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	61 nC	TO-263 (D2PAK)	100 V	200 mOhm	P-Channel	20 V	1400 pF	10 V	Surface Mount
Vishay General Semiconductor - Diodes Division IRF9540STRL	-55 °C	175 ░C	19 A	4 V	3.7 W 150 W	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	61 nC	TO-263 (D2PAK)	100 V	200 mOhm	P-Channel	20 V	1400 pF	10 V	Surface Mount
Vishay General Semiconductor - Diodes Division IRF9540SPBF	-55 °C	175 ░C	19 A	4 V	3.7 W 150 W	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	61 nC	TO-263 (D2PAK)	100 V	200 mOhm	P-Channel	20 V	1400 pF	10 V	Surface Mount
Vishay General Semiconductor - Diodes Division IRF9540PBF-BE3	-55 °C	175 ░C	19 A	4 V	150 W	MOSFET (Metal Oxide)	TO-220-3	61 nC	TO-220AB	100 V	200 mOhm	P-Channel	20 V	1400 pF		Through Hole
Vishay General Semiconductor - Diodes Division IRF9540	-55 °C	175 ░C	19 A	4 V	150 W	MOSFET (Metal Oxide)	TO-220-3	61 nC	TO-220AB	100 V	200 mOhm	P-Channel	20 V	1400 pF	10 V	Through Hole