Discrete Semiconductor Products

IRF720PBF-BE3

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MOSFET N-CH 400V 3.3A TO220AB

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Discrete Semiconductor Products

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MOSFET N-CH 400V 3.3A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRF720PBF-BE3

Current - Continuous Drain (Id) @ 25°C	3.3 A
Drain to Source Voltage (Vdss)	400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	410 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	1.8 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRF720PBF-BE3	TO-220-3	3.3 A	20 V	410 pF	MOSFET (Metal Oxide)	TO-220AB	20 nC	50 W	-55 °C	150 °C	400 V	1.8 Ohm	N-Channel	4 V	Through Hole
Vishay General Semiconductor - Diodes Division IRF720L	I2PAK TO-262-3 Long Leads TO-262AA	3.3 A	20 V	410 pF	MOSFET (Metal Oxide)	I2PAK	20 nC		-55 °C	150 °C	400 V	1.8 Ohm	N-Channel	4 V	Through Hole	3.1 W 50 W	10 V
Vishay General Semiconductor - Diodes Division IRF720STRRPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.3 A	20 V	410 pF	MOSFET (Metal Oxide)	TO-263 (D2PAK)	20 nC		-55 °C	150 °C	400 V	1.8 Ohm	N-Channel	4 V	Surface Mount	3.1 W 50 W	10 V

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General part information

N-Channel 400 V 3.3A (Tc) 50W (Tc) Through Hole TO-220AB

Technical documentation and resources