IRF720 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 400V 3.3A TO220AB
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [x] | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-220-3 | 3.3 A | 20 V | 410 pF | MOSFET (Metal Oxide) | TO-220AB | 20 nC | 50 W | -55 °C | 150 °C | 400 V | 1.8 Ohm | N-Channel | 4 V | Through Hole | ||
Vishay General Semiconductor - Diodes Division | I2PAK TO-262-3 Long Leads TO-262AA | 3.3 A | 20 V | 410 pF | MOSFET (Metal Oxide) | I2PAK | 20 nC | -55 °C | 150 °C | 400 V | 1.8 Ohm | N-Channel | 4 V | Through Hole | 3.1 W 50 W | 10 V | |
Vishay General Semiconductor - Diodes Division | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.3 A | 20 V | 410 pF | MOSFET (Metal Oxide) | TO-263 (D2PAK) | 20 nC | -55 °C | 150 °C | 400 V | 1.8 Ohm | N-Channel | 4 V | Surface Mount | 3.1 W 50 W | 10 V |