Discrete Semiconductor Products

SIR670DP-T1-GE3

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MOSFET N-CH 60V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 60V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR670DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2815 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	56.8 W, 5 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.8 V

Part	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
Vishay General Semiconductor - Diodes Division SIR670DP-T1-GE3	N-Channel	MOSFET (Metal Oxide)	63 nC	PowerPAK® SO-8	20 V	5 W 56.8 W	PowerPAK® SO-8	60 V	4.8 mOhm	60 A	2815 pF	2.8 V	4.5 V 10 V	-55 °C	150 °C	Surface Mount

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General part information

N-Channel 60 V 60A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources