SIR670 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 60V 60A PPAK SO-8
| Part | FET Type | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) | Package / Case | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | MOSFET (Metal Oxide) | 63 nC | PowerPAK® SO-8 | 20 V | 5 W 56.8 W | PowerPAK® SO-8 | 60 V | 4.8 mOhm | 60 A | 2815 pF | 2.8 V | 4.5 V 10 V | -55 °C | 150 °C | Surface Mount |