Specification	PSMP033-60YEX

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	69 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2590 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

PSMP033-60YE Series

60 V, P-channel Trench MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs
Nexperia USA Inc. PSMP033-60YEX	69 nC	30 A	Surface Mount	MOSFET (Metal Oxide)	4.5 V 10 V	110 W	SC-100 SOT-669	LFPAK56 Power-SO8	175 °C	-55 °C	3 V	20 V	P-Channel	60 V	2590 pF	33 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical documentation and resources