
Catalog
60 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

60 V, P-channel Trench MOSFET
60 V, P-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Package / Case | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 69 nC | 30 A | Surface Mount | MOSFET (Metal Oxide) | 4.5 V 10 V | 110 W | SC-100 SOT-669 | LFPAK56 Power-SO8 | 175 °C | -55 °C | 3 V | 20 V | P-Channel | 60 V | 2590 pF | 33 mOhm |