Discrete Semiconductor Products

2SK3483-AZ

Obsolete

Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3483-AZ

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	1 W, 40 W
Rds On (Max) @ Id, Vgs	52 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Power MOSFETs for Automotive

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)
Renesas Electronics Corporation 2SK3483-AZ	28 A	N-Channel	52 mOhm	20 V	100 V	Through Hole	10 V 49 nC	1 W 40 W	IPAK TO-251-3 Short Leads TO-251AA	150 °C	2300 pF	MOSFET (Metal Oxide)	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Nch Single Power MOSFET 100V 28A 52mohm MP-3/TO-251 Automotive

Technical documentation and resources