Specification	PSMN1R9-40YSBX

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	6297 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

PSMN1R9-40YSB Series

N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature
Nexperia USA Inc. PSMN1R9-40YSBX	10 V	20 V	N-Channel	1.9 mOhm	Surface Mount	40 V	200 A	SC-100 SOT-669	6297 pF	3.6 V	175 °C	-55 °C	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	78 nC	Schottky Diode (Body)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1495	$ 2.55

Description

General part information

PSMN1R9-40YSB Series

200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.