PSMN1R9-40YSB Series

N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Catalog

N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature
Nexperia USA Inc. PSMN1R9-40YSBX	10 V	20 V	N-Channel	1.9 mOhm	Surface Mount	40 V	200 A	SC-100 SOT-669	6297 pF	3.6 V	175 °C	-55 °C	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	78 nC	Schottky Diode (Body)

Catalog

N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Description

200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.