Specification	STP11NK50ZFP

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1390 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	520 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STP11NK50ZFP Series

N-channel 500 V, 0.48 Ohm typ., 10 A SuperMESH Power MOSFET in TO-220FP package

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STP11NK50ZFP	1390 pF	10 A	Through Hole	TO-220FP	150 °C	-55 °C	500 V	TO-220-3 Full Pack	30 V	N-Channel	4.5 V	10 V	520 mOhm	MOSFET (Metal Oxide)	68 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	209	$ 3.76
Newark	Each	1	$ 2.97
		10	$ 2.53
		100	$ 1.97
		500	$ 1.72
		1000	$ 1.51
		3000	$ 1.25
		10000	$ 1.20

Description

General part information

STP11NK50ZFP Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Technical Data Sheet EN

Datasheet