Discrete Semiconductor Products

STFW42N60M2-EP

Obsolete

MOSFETS N-CHANNEL 600 V, 0.076 OHM TYP 34 A MDMESH M2 EP POWER MOSFET

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Discrete Semiconductor Products

Obsolete

MOSFETS N-CHANNEL 600 V, 0.076 OHM TYP 34 A MDMESH M2 EP POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	STFW42N60M2-EP

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	55 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	87 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type
STMicroelectronics STFW42N60M2-EP	Through Hole	63 W	4 V	TO-3P-3 Full Pack	34 A	87 mOhm	150 °C	-55 °C	600 V	25 V	2370 pF	TO-3PF	MOSFET (Metal Oxide)	10 V	55 nC	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETS N-CHANNEL 600 V, 0.076 OHM TYP 34 A MDMESH M2 EP POWER MOSFET

Technical documentation and resources