Discrete Semiconductor Products

FD900R12IP4DVBOSA1

NRND

IGBT MOD 1200V 900A 5100W

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Discrete Semiconductor Products

NRND

IGBT MOD 1200V 900A 5100W

Technical Specifications

Parameters and characteristics for this part

Specification	FD900R12IP4DVBOSA1

Configuration	Single
Current - Collector (Ic) (Max) [Max]	900 A
Current - Collector Cutoff (Max) [Max]	5 mA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	54 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	5100 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic [Max]	2.05 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Power - Max [Max]	NTC Thermistor	IGBT Type	Mounting Type	Input Capacitance (Cies) @ Vce	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Input	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Configuration
INFINEON FD900R12IP4DVBOSA1	5100 W		Trench Field Stop	Chassis Mount	54 nF	Module	Module	5 mA	1200 V	Standard	900 A	-40 C	150 °C	2.05 V	Single
INFINEON FD900R12IP4DBOSA1	5100 W			Chassis Mount	54 nF	Module	Module	5 mA	1200 V	Standard	900 A	-40 C	150 °C	2.05 V	Single Chopper

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Module Trench Field Stop Single 1200 V 900 A 5100 W Chassis Mount Module

Technical documentation and resources