HMC516LC5TR
ActiveRF AMPLIFIER, 9GHZ TO 18GHZ, 18 DB GAIN, LCC-32, -40 °C TO 85 °C
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HMC516LC5TR
ActiveRF AMPLIFIER, 9GHZ TO 18GHZ, 18 DB GAIN, LCC-32, -40 °C TO 85 °C
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC516LC5TR |
|---|---|
| Current - Supply | 88 mA |
| Frequency [Max] | 18 GHz |
| Frequency [Min] | 9 GHz |
| Gain | 20.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 2 dB |
| P1dB | 14 dBm |
| Package / Case | 32-TFQFN Exposed Pad |
| RF Type | General Purpose |
| Supplier Device Package | 32-QFN (5x5) |
| Voltage - Supply [Max] | 3.5 V |
| Voltage - Supply [Min] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HMC516 Series
The HMC516 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) which covers the 7 to 17 GHz frequency range. The HMC516 provides 20 dB of small signal gain, 1.8 dB of noise figure and has an output IP3 greater than +20 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment and SensorsMilitary & Space
Documents
Technical documentation and resources
