Discrete Semiconductor Products

LSIC1MO120G0025

Active

LITTELFUSE

SIC MOSFET 1200V 25MO TO247-4L/ TUBE ROHS COMPLIANT: YES

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DocumentsLSIC1MO120G0025 | Datasheet

Discrete Semiconductor Products

LSIC1MO120G0025

Active

LITTELFUSE

SIC MOSFET 1200V 25MO TO247-4L/ TUBE ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsLSIC1MO120G0025 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LSIC1MO120G0025

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	265 nC
Input Capacitance (Ciss) (Max) @ Vds	495 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs [Max]	32 mOhm
Supplier Device Package	TO-247-4L
Vgs (Max) [Max]	22 V, -6 V
Vgs(th) (Max) @ Id	4 V

LSIC1MO120G0025 Series

SiC MOSFET 1200V 25mO TO247-4L

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Vgs (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
LITTELFUSE LSIC1MO120G0025	265 nC	N-Channel	4 V	Through Hole	1.2 kV	TO-247-4L	500 W	495 pF	100 A	32 mOhm	TO-247-4	-6 V 22 V	175 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+
Newark	Each	250	$ 31.44	1m+
TME	N/A	1	$ 45.46	<1d
		5	$ 42.56
		10	$ 36.47
		30	$ 36.12

Description

General part information

LSIC1MO120G0025 Series

Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance. The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance.

Documents

Technical documentation and resources

LSIC1MO120G0025 | Datasheet

Datasheet