LSIC1MO120G0025 Series

SiC MOSFET 1200V 25mO TO247-4L

Catalog

SiC MOSFET 1200V 25mO TO247-4L

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Vgs (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
LITTELFUSE LSIC1MO120G0025	265 nC	N-Channel	4 V	Through Hole	1.2 kV	TO-247-4L	500 W	495 pF	100 A	32 mOhm	TO-247-4	-6 V 22 V	175 °C	-55 °C

Catalog

SiC MOSFET 1200V 25mO TO247-4L

Description

Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance. The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance.