TP5335MF-G-VAO
ActiveP-CHANNEL ENHANCEMENT MODE MOSFET
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TP5335MF-G-VAO
ActiveP-CHANNEL ENHANCEMENT MODE MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | TP5335MF-G-VAO |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 85 mA |
| Drain to Source Voltage (Vdss) | 350 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-VDFN Exposed Pad |
| Power Dissipation (Max) | 360 mW |
| Qualification | AEC-Q100 |
| Rds On (Max) @ Id, Vgs | 30 Ohm |
| Supplier Device Package | 6-DFN (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | T/R | 1 | $ 0.53 | |
| 25 | $ 0.44 | |||
| 100 | $ 0.40 | |||
| 1000 | $ 0.37 | |||
| 5000 | $ 0.35 | |||
Description
General part information
TP5335 Series
TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.