Discrete Semiconductor Products

3N163 TO-72 4L ROHS

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P-CHANNEL, SINGLE ENHANCEMENT MO

Discrete Semiconductor Products

Active

P-CHANNEL, SINGLE ENHANCEMENT MO

Technical Specifications

Parameters and characteristics for this part

Specification	3N163 TO-72 4L ROHS

Current - Continuous Drain (Id)	50 mA
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max)	3.5 pF
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Package Name	TO-72-4
Power Dissipation (Max)	375 mW
Rds On (Max)	250 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-6.5 V
Vgs(th) (Max)	5 V

Part	Package / Case	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id)	Rds On (Max)	FET Type	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Vgs(th) (Max)	Vgs (Max)
Linear Integrated Systems, Inc. 3N163 TO-72 4L ROHS	TO-206AF TO-72-4 Metal Can	375 mW	MOSFET (Metal Oxide)	50 mA	250 Ohm	P-Channel	3.5 pF	40 V	Through Hole	20 V	TO-72-4	5 V	-6.5 V
Linear Integrated Systems, Inc. 3N163 SOT-143 4L ROHS	TO-253-4 TO-253AA	350 mW	MOSFET (Metal Oxide)	50 mA	250 Ohm	P-Channel	3.5 pF	40 V	Surface Mount	20 V	SOT-143-4	5 V	-6.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 40 V 50mA 375mW Through Hole TO-72-4

Technical documentation and resources