Discrete Semiconductor Products

3N163 TO-72 4L ROHS

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P-CHANNEL, SINGLE ENHANCEMENT MO

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Discrete Semiconductor Products

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P-CHANNEL, SINGLE ENHANCEMENT MO

Technical Specifications

Parameters and characteristics for this part

Specification	3N163 TO-72 4L ROHS

Current - Continuous Drain (Id) @ 25°C	50 mA
Drain to Source Voltage (Vdss)	40 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	3.5 pF
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Power Dissipation (Max) [Max]	375 mW
Rds On (Max) @ Id, Vgs	250 Ohm
Supplier Device Package	TO-72-4
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-6.5 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max) [Max]
Linear Integrated Systems, Inc. 3N163 TO-72 4L ROHS	TO-206AF TO-72-4 Metal Can	375 mW	MOSFET (Metal Oxide)	50 mA	250 Ohm	P-Channel	3.5 pF	40 V	Through Hole	TO-72-4	5 V	-6.5 V
Linear Integrated Systems, Inc. 3N163 SOT-143 4L ROHS	TO-253-4 TO-253AA	350 mW	MOSFET (Metal Oxide)	50 mA	250 Ohm	P-Channel	3.5 pF	40 V	Surface Mount	SOT-143-4	5 V	-6.5 V

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General part information

P-Channel 40 V 50mA 375mW Through Hole TO-72-4

Technical documentation and resources