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SOT1118D
Discrete Semiconductor Products

PBSS4260PANS-QX

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Nexperia USA Inc.

60 V, 2 A NPN/NPN LOW VCESAT DOUBLE TRANSISTOR

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SOT1118D
Discrete Semiconductor Products

PBSS4260PANS-QX

Active
Nexperia USA Inc.

60 V, 2 A NPN/NPN LOW VCESAT DOUBLE TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4260PANS-QX
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]250
Frequency - Transition140 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UDFN Exposed Pad
Power - Max [Max]510 mW
QualificationAEC-Q101
Supplier Device PackageDFN2020D-6
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.20

Description

General part information

PBSS4260PANS-Q Series

NPN/NPN low VCEsatdouble transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.