Catalog
60 V, 2 A NPN/NPN low VCEsat double transistor
Description
AI
NPN/NPN low VCEsatdouble transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
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60 V, 2 A NPN/NPN low VCEsat double transistor
60 V, 2 A NPN/NPN low VCEsat double transistor
| Part | Current - Collector Cutoff (Max) [Max] | Grade | Voltage - Collector Emitter Breakdown (Max) [Max] | Qualification | Operating Temperature | Transistor Type | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Mounting Type | Package / Case | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 100 nA | Automotive | 60 V | AEC-Q101 | 150 °C | 2 NPN (Dual) | 140 MHz | 350 mV | Surface Mount | 6-UDFN Exposed Pad | 2 A | 510 mW | DFN2020D-6 | 250 |