JANTX1N3293

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DIODE GEN PURP 600V 100A DO205AA

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 100A DO205AA

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX1N3293

Current - Average Rectified (Io)	100 A
Current - Reverse Leakage @ Vr	10 mA
Grade	Military
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-8, DO-205AA
Qualification	MIL-PRF-19500/246
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-8
Supplier Device Package	DO-205AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

Part	Current - Average Rectified (Io)	Technology	Qualification	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Grade	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Microchip Technology JANTX1N3293	100 A	Standard	MIL-PRF-19500/246	10 mA	200 C	-65 C	DO-8	DO-205AA	Military	Standard Recovery >500ns	200 mA	600 V	DO-205AA DO-8 Stud	Chassis Stud Mount	1.55 V
Microchip Technology 1N3293R	100 A	Reverse Polarity Standard		10 mA	200 C	-65 C	DO-8	DO-205AA		Standard Recovery >500ns	200 mA	600 V	DO-205AA DO-8 Stud	Stud Mount	1.55 V
Microchip Technology 1N3293A	150 A	Standard		50 µA	200 C	-65 C	DO-8	DO-205AA		Standard Recovery >500ns	200 mA	600 V	DO-205AA DO-8 Stud	Stud Mount	1.1 V
Microchip Technology 1N3293	100 A	Standard		10 mA	200 C	-65 C	DO-8	DO-205AA		Standard Recovery >500ns	200 mA	600 V	DO-205AA DO-8 Stud	Stud Mount	1.55 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 100A Chassis, Stud Mount DO-205AA (DO-8)

Technical documentation and resources

No documents available