Discrete Semiconductor Products

BYW29E-150,127

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DIODE GEN PURP 150V 8A TO220AC

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Discrete Semiconductor Products

Active

DIODE GEN PURP 150V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	BYW29E-150,127

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	25 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.05 V

Part	Package / Case	Speed	Supplier Device Package	Technology	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If
WeEn Semiconductors BYW29EX-200,127	TO-220-2 Full Pack Isolated Tab	200 mA 500 ns	TO-220FP	Standard	Through Hole	8 A	10 ÁA	150 °C	1.05 V	200 V	25 ns
WeEn Semiconductors BYW29E-100,127	TO-220-2	200 mA 500 ns	TO-220AC	Standard	Through Hole	8 A	10 µA	150 °C	1.05 V	100 V	25 ns
WeEn Semiconductors BYW29ED-200,118	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 mA 500 ns	DPAK	Standard	Surface Mount	8 A	10 ÁA	150 °C		200 V	25 ns	1.3 V
WeEn Semiconductors BYW29E-200,127	TO-220-2	200 mA 500 ns	TO-220AC	Standard	Through Hole	8 A	10 ÁA	150 °C	1.05 V	200 V	25 ns
WeEn Semiconductors BYW29E-150,127	TO-220-2	200 mA 500 ns	TO-220AC	Standard	Through Hole	8 A	10 µA	150 °C	1.05 V		25 ns

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General part information

Diode 150 V 8A Through Hole TO-220AC

Technical documentation and resources

No documents available