Discrete Semiconductor Products

IPW65R190CFDFKSA2

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MOSFET N-CH 650V 17.5A TO247-3

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Discrete Semiconductor Products

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MOSFET N-CH 650V 17.5A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R190CFDFKSA2

Current - Continuous Drain (Id) @ 25°C	17.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	151 W
Rds On (Max) @ Id, Vgs [Max]	190 mOhm
Supplier Device Package	PG-TO247-3-41
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs(th) (Max) @ Id	Grade	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Qualification	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPW65R190CFD7AXKSA1	4.5 V	Automotive	1291 pF	TO-247-3	190 mOhm	N-Channel	20 V	AEC-Q101	Through Hole	28 nC	77 W	650 V	MOSFET (Metal Oxide)	14 A	-40 °C	150 °C	PG-TO247-3
INFINEON IPW65R190CFDFKSA2	4.5 V		1850 pF	TO-247-3		N-Channel	20 V		Through Hole	68 nC	151 W	650 V	MOSFET (Metal Oxide)	17.5 A	-55 °C	150 °C	PG-TO247-3-41	10 V	190 mOhm
INFINEON IPW65R190C7XKSA1	4 V			TO-247-3		N-Channel	20 V		Through Hole	23 nC	72 W	650 V	MOSFET (Metal Oxide)	13 A	-55 °C	150 °C	PG-TO247-3	10 V	190 mOhm	1150 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 17.5A (Tc) 151W (Tc) Through Hole PG-TO247-3-41

Technical documentation and resources