
Discrete Semiconductor Products
IPW65R190C7XKSA1
ActiveINFINEON
COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 190 MOHM; HIGHEST PERFORMANCE
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Discrete Semiconductor Products
IPW65R190C7XKSA1
ActiveINFINEON
COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 190 MOHM; HIGHEST PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPW65R190C7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1150 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 72 W |
| Rds On (Max) @ Id, Vgs [Max] | 190 mOhm |
| Supplier Device Package | PG-TO247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
| Part | Vgs(th) (Max) @ Id | Grade | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Qualification | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 4.5 V | Automotive | 1291 pF | TO-247-3 | 190 mOhm | N-Channel | 20 V | AEC-Q101 | Through Hole | 28 nC | 77 W | 650 V | MOSFET (Metal Oxide) | 14 A | -40 °C | 150 °C | PG-TO247-3 | |||
INFINEON | 4.5 V | 1850 pF | TO-247-3 | N-Channel | 20 V | Through Hole | 68 nC | 151 W | 650 V | MOSFET (Metal Oxide) | 17.5 A | -55 °C | 150 °C | PG-TO247-3-41 | 10 V | 190 mOhm | ||||
INFINEON | 4 V | TO-247-3 | N-Channel | 20 V | Through Hole | 23 nC | 72 W | 650 V | MOSFET (Metal Oxide) | 13 A | -55 °C | 150 °C | PG-TO247-3 | 10 V | 190 mOhm | 1150 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPW65R190 Series
Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
Documents
Technical documentation and resources
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