Discrete Semiconductor Products

FDMS3602S

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ON Semiconductor

ASYMMETRIC DUAL N-CHANNEL MOSFET POWERTRENCH® POWER STAGE, 25V

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Discrete Semiconductor Products

FDMS3602S

Active

ON Semiconductor

ASYMMETRIC DUAL N-CHANNEL MOSFET POWERTRENCH® POWER STAGE, 25V

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMS3602S

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	26 A, 15 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	5.6 mOhm
Supplier Device Package	Power56
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDMS3602AS Series

Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V

Part	Package / Case	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power - Max	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FDMS3602AS	8-PowerTDFN	2 N-Channel (Dual) Asymmetrical	Logic Level Gate	25 V	5.6 mOhm	8-PQFN (5x6)	2.2 W 2.5 W	MOSFET (Metal Oxide)	27 nC	Surface Mount	3 V	1770 pF	15 A 26 A	-55 °C	150 °C
ON Semiconductor FDMS3602S	8-PowerTDFN	2 N-Channel (Dual)	Logic Level Gate	25 V	5.6 mOhm	Power56		MOSFET (Metal Oxide)	27 nC	Surface Mount	3 V		15 A 26 A	-55 °C	150 °C	1 W	1680 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	176	$ 1.71

Description

General part information

FDMS3602AS Series

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Documents

Technical documentation and resources