FDMS3602AS Series

Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V

Catalog

Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V

Part	Package / Case	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power - Max	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FDMS3602AS	8-PowerTDFN	2 N-Channel (Dual) Asymmetrical	Logic Level Gate	25 V	5.6 mOhm	8-PQFN (5x6)	2.2 W 2.5 W	MOSFET (Metal Oxide)	27 nC	Surface Mount	3 V	1770 pF	15 A 26 A	-55 °C	150 °C
ON Semiconductor FDMS3602S	8-PowerTDFN	2 N-Channel (Dual)	Logic Level Gate	25 V	5.6 mOhm	Power56		MOSFET (Metal Oxide)	27 nC	Surface Mount	3 V		15 A 26 A	-55 °C	150 °C	1 W	1680 pF

Catalog

Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V

Key Features

• Q1: N-ChannelMax rDS(on)= 5.6 mΩ at VGS= 10 V, ID= 15 AMax rDS(on)= 8.5 mΩ at VGS= 4.5 V, ID= 14 A

• Q2: N-ChannelMax rDS(on)= 2.2 mΩ at VGS= 10 V, ID= 26 AMax rDS(on)= 3.4 mΩ at VGS= 4.5 V, ID= 22 A

• Low inductance packaging shortens rise/fall times, resulting in lower switching losses

• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.