Specification	PBSS4130PAN,115

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	210
Frequency - Transition	165 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	510 mW
Qualification	AEC-Q100
Supplier Device Package	6-HUSON (2x2)
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

PBSS4130PAN Series

30 V, 1 A NPN/NPN low VCEsat transistor

Part	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Power - Max [Max]	Transistor Type	Frequency - Transition	Mounting Type	Package / Case	Grade	Current - Collector Cutoff (Max) [Max]	Qualification
Nexperia USA Inc. PBSS4130PAN,115	100 mV	30 V	6-HUSON (2x2)	210	1 A	150 °C	510 mW	2 NPN (Dual)	165 MHz	Surface Mount	6-UFDFN Exposed Pad	Automotive	100 nA	AEC-Q100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.98

Description

General part information

PBSS4130PAN Series

NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.