Catalog
30 V, 1 A NPN/NPN low VCEsat transistor
Description
AI
NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
30 V, 1 A NPN/NPN low VCEsat transistor
30 V, 1 A NPN/NPN low VCEsat transistor
| Part | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Operating Temperature | Power - Max [Max] | Transistor Type | Frequency - Transition | Mounting Type | Package / Case | Grade | Current - Collector Cutoff (Max) [Max] | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 100 mV | 30 V | 6-HUSON (2x2) | 210 | 1 A | 150 °C | 510 mW | 2 NPN (Dual) | 165 MHz | Surface Mount | 6-UFDFN Exposed Pad | Automotive | 100 nA | AEC-Q100 |