Specification	PMDXB950UPELZ

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	2.1 nC
Input Capacitance (Ciss) (Max) @ Vds	43 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	380 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	DFN1010B-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

PMDXB950UPEL Series

20 V, dual P-channel Trench MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Configuration	Power - Max [Max]	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]
Nexperia USA Inc. PMDXB950UPELZ	2.1 nC	DFN1010B-6	20 V	500 mA	2 P-Channel (Dual)	380 mW	6-XFDFN Exposed Pad	Surface Mount	950 mV	43 pF	1.4 Ohm	MOSFET (Metal Oxide)	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	25893	$ 0.68

Description

General part information

PMDXB950UPEL Series

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.