20 V, dual P-channel Trench MOSFET
20 V, dual P-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Configuration | Power - Max [Max] | Package / Case | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Technology | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 2.1 nC | DFN1010B-6 | 20 V | 500 mA | 2 P-Channel (Dual) | 380 mW | 6-XFDFN Exposed Pad | Surface Mount | 950 mV | 43 pF | 1.4 Ohm | MOSFET (Metal Oxide) | 150 °C | -55 °C |