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8-PowerWDFN
Discrete Semiconductor Products

TSM060N03PQ33

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Taiwan Semiconductor Corporation

30V, 62A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

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8-PowerWDFN
Discrete Semiconductor Products

TSM060N03PQ33

Active
Taiwan Semiconductor Corporation

30V, 62A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM060N03PQ33
Current - Continuous Drain (Id) @ 25°C62 A, 15 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25.4 nC
Input Capacitance (Ciss) (Max) @ Vds1342 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)2.3 W, 40 W
Rds On (Max) @ Id, Vgs6 mOhm
Supplier Device Package8-PDFN (3.1x3.1)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.59
20000$ 0.19
30000$ 0.19

Description

General part information

TSM060 Series

N-Channel 30 V 15A (Ta), 62A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-PDFN (3.1x3.1)