TSM060 Series

Catalog

MOSFET N-CHANNEL 30V 70A TO252

Part	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package [y]	Supplier Device Package [x]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]
Taiwan Semiconductor Corporation TSM060N03CP ROG	2.5 V	N-Channel	70 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1160 pF	11.1 nC	4.5 V 10 V	Surface Mount	30 V	150 °C	MOSFET (Metal Oxide)	TO-252 (DPAK)	6 mOhm	54 W
Taiwan Semiconductor Corporation TSM060N03PQ33 RGG	2.5 V	N-Channel	62 A	20 V	8-PowerWDFN			4.5 V 10 V	Surface Mount	30 V		MOSFET (Metal Oxide)	8-PDFN	6 mOhm	40 W	3.1	3.1	1342 pF	25.4 nC	150 °C	-55 °C
Taiwan Semiconductor Corporation TSM060N03PQ33	2.5 V	N-Channel	15 A 62 A	20 V	8-PowerWDFN			4.5 V 10 V	Surface Mount	30 V		MOSFET (Metal Oxide)	8-PDFN	6 mOhm	2.3 W 40 W	3.1	3.1	1342 pF	25.4 nC	150 °C	-55 °C
Taiwan Semiconductor Corporation TSM060N03ECP ROG	2.5 V	N-Channel	70 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		11.1 nC	4.5 V 10 V	Surface Mount	30 V	150 °C	MOSFET (Metal Oxide)	TO-252 (DPAK)	6 mOhm	54 W			1210 pF
Taiwan Semiconductor Corporation TSM060N03ECP	2.5 V	N-Channel	70 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		11.1 nC	4.5 V 10 V	Surface Mount	30 V	150 °C	MOSFET (Metal Oxide)	TO-252 (DPAK)	6 mOhm	54 W			1210 pF