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SOT223-3L
Discrete Semiconductor Products

NDT456P

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 7.5 A, 0.026 OHM, SOT-223, SURFACE MOUNT

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SOT223-3L
Discrete Semiconductor Products

NDT456P

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 7.5 A, 0.026 OHM, SOT-223, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationNDT456P
Current - Continuous Drain (Id) @ 25°C7.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds1440 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max) [Max]3 W
Rds On (Max) @ Id, Vgs30 mOhm
Supplier Device PackageSOT-223-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.74
10$ 1.77
100$ 1.22
500$ 0.98
1000$ 0.90
2000$ 0.84
Digi-Reel® 1$ 2.74
10$ 1.77
100$ 1.22
500$ 0.98
1000$ 0.90
2000$ 0.84
Tape & Reel (TR) 4000$ 0.80
NewarkEach (Supplied on Full Reel) 4000$ 0.86
ON SemiconductorN/A 1$ 0.55

Description

General part information

NDT456P Series

Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.