NDT456P Series

P-Channel Enhancement Mode Field Effect Transistor

Catalog

P-Channel Enhancement Mode Field Effect Transistor

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor NDT456P	SOT-223-4	7.5 A	3 V	P-Channel	TO-261-4 TO-261AA	30 mOhm	4.5 V 10 V	20 V	3 W	Surface Mount	MOSFET (Metal Oxide)	1440 pF	30 V	150 °C	-65 °C

Catalog

P-Channel Enhancement Mode Field Effect Transistor

Key Features

-7.5 A, -30 VRDS(ON)= 0.030 Ω @ VGS= -10 VRDS(ON)= 0.045 Ω @ VGS= -4.5 V

• High density cell design for extremely low RDS(ON)

• High power and current handling capability in a widely used surface mount package

Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.