Specification	PMCM4402UPEZ

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	4-XFBGA, WLCSP
Power Dissipation (Max) [Max]	400 mW
Supplier Device Package	4-WLCSP
Supplier Device Package [x]	0.78
Supplier Device Package [y]	0.78
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V

PMCM4402UPE Series

20 V, P-channel Trench MOSFET

Part	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case
Nexperia USA Inc. PMCM4402UPEZ	MOSFET (Metal Oxide)	2.5 V	4.5 V	P-Channel	6.2 nC	400 mW	Surface Mount	150 °C	4-WLCSP	0.78	0.78	20 V	8 V	4.2 A	4-XFBGA WLCSP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.12

General part information

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Technical documentation and resources