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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Mounting Type | Operating Temperature | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] | Drain to Source Voltage (Vdss) | Vgs (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 2.5 V | 4.5 V | P-Channel | 6.2 nC | 400 mW | Surface Mount | 150 °C | 4-WLCSP | 0.78 | 0.78 | 20 V | 8 V | 4.2 A | 4-XFBGA WLCSP |