Specification	NTMFS006N08MC

Current - Continuous Drain (Id) @ 25°C	82 A, 9.3 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	1 W, 78 W
Rds On (Max) @ Id, Vgs [Max]	6 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTMFS006N08MC Series

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 32A, 6.0mΩ

Part	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)
ON Semiconductor NTMFS006N08MC	8-PowerTDFN	MOSFET (Metal Oxide)	6 V 10 V	-55 °C	150 °C	N-Channel	4 V	1 W 78 W	30 nC	2300 pF	80 V	8-PQFN (5x6)	9.3 A 82 A	Surface Mount	6 mOhm	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.87
		10	$ 1.86
		100	$ 1.28
		500	$ 1.04
		1000	$ 0.96
	Digi-Reel®	1	$ 2.87
		10	$ 1.86
		100	$ 1.28
		500	$ 1.04
		1000	$ 0.96
	Tape & Reel (TR)	3000	$ 0.89
Newark	Each (Supplied on Cut Tape)	1	$ 3.12
		10	$ 2.30
		25	$ 2.12
		50	$ 1.95
ON Semiconductor	N/A	1	$ 0.82

Description

General part information

NTMFS006N08MC Series

This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.