NTMFS006N08MC Series

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 32A, 6.0mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 32A, 6.0mΩ

Part	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)
ON Semiconductor NTMFS006N08MC	8-PowerTDFN	MOSFET (Metal Oxide)	6 V 10 V	-55 °C	150 °C	N-Channel	4 V	1 W 78 W	30 nC	2300 pF	80 V	8-PQFN (5x6)	9.3 A 82 A	Surface Mount	6 mOhm	20 V

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 32A, 6.0mΩ

Key Features

• 50% Lower Qrrthan Other MOSFET Suppliers

• Soft Body diode

• Max rDS(on)= 14.3 mΩ at VGS= 6 V, ID= 16 A

• Shielded Gate MOSFET Technology

• Max rDS(on)= 6.0 mΩ at VGS= 10 V, ID= 32 A

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.