Specification	BUK6D125-60EX

Current - Continuous Drain (Id) @ 25°C	2.7 A, 7.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	196 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	2 W, 15 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

BUK6D125-60E Series

60 V, N-channel Trench MOSFET

Part	Grade	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Qualification	Package / Case
Nexperia USA Inc. BUK6D125-60EX	Automotive	4.5 V 10 V	196 pF	20 V	N-Channel	2.7 V	Surface Mount	6 nC	DFN2020MD-6	175 °C	-55 °C	2 W 15 W	60 V	125 mOhm	2.7 A 7.4 A	MOSFET (Metal Oxide)	AEC-Q101	6-UDFN Exposed Pad

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.78

Description

General part information

BUK6D125-60E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.