Catalog
60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Grade | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Qualification | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | 4.5 V 10 V | 196 pF | 20 V | N-Channel | 2.7 V | Surface Mount | 6 nC | DFN2020MD-6 | 175 °C | -55 °C | 2 W 15 W | 60 V | 125 mOhm | 2.7 A 7.4 A | MOSFET (Metal Oxide) | AEC-Q101 | 6-UDFN Exposed Pad |