Specification	PMZB290UNE2YL

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	46 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	350 mW
Power Dissipation (Max)	5.43 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	950 mV

PMZB290UNE2 Series

20 V, N-channel Trench MOSFET

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)
Nexperia USA Inc. PMZB290UNE2YL	3-XFDFN	46 pF	Surface Mount	320 mOhm	950 mV	MOSFET (Metal Oxide)	1.4 nC	150 °C	-55 °C	1.2 A	8 V	350 mW	5.43 W	1.5 V 4.5 V	DFN1006B-3	N-Channel	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	600	$ 0.32

Description

General part information

PMZB290UNE2 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.