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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 3-XFDFN | 46 pF | Surface Mount | 320 mOhm | 950 mV | MOSFET (Metal Oxide) | 1.4 nC | 150 °C | -55 °C | 1.2 A | 8 V | 350 mW | 5.43 W | 1.5 V 4.5 V | DFN1006B-3 | N-Channel | 20 V |