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CSD25483F4
Discrete Semiconductor Products

CSD25484F4T

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 109 MOHM, GATE ESD PROTECTION

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CSD25483F4
Discrete Semiconductor Products

CSD25484F4T

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 109 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD25484F4T
Current - Continuous Drain (Id) @ 25°C2.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8 V, 8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.42 nC
Input Capacitance (Ciss) (Max) @ Vds230 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs [Max]94 mOhm
Supplier Device Package3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]-12 V
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.62
10$ 0.51
100$ 0.39
Digi-Reel® 1$ 0.62
10$ 0.51
100$ 0.39
Tape & Reel (TR) 250$ 0.39
500$ 0.33
750$ 0.38
1250$ 0.33
1750$ 0.34
2500$ 0.33
Texas InstrumentsSMALL T&R 1$ 0.76
100$ 0.52
250$ 0.40
1000$ 0.26

Description

General part information

CSD25484F4 Series

This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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