Discrete Semiconductor Products

IRFP140NPBF

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INFINEON

POWER MOSFET, HEXFET, N CHANNEL, 100 V, 33 A, 0.052 OHM, TO-247AC, THROUGH HOLE

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRFP140NPBF

Active

INFINEON

POWER MOSFET, HEXFET, N CHANNEL, 100 V, 33 A, 0.052 OHM, TO-247AC, THROUGH HOLE

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP140NPBF

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	140 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFP140 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs (Max)	Technology
INFINEON IRFP140NPBF	1400 pF	94 nC	10 V	175 °C	-55 °C	4 V	Through Hole	TO-247-3	100 V	N-Channel	52 mOhm	33 A	TO-247AC	140 W	20 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1407	$ 2.63
	Tube	1	$ 2.82
		10	$ 1.83
		100	$ 1.26
		500	$ 1.02
		1000	$ 0.94
		2000	$ 0.87
		5000	$ 0.87
Newark	Each	1	$ 2.69
		10	$ 1.76
		100	$ 1.43
		500	$ 1.18
		1600	$ 1.11
		3200	$ 1.04

Description

General part information

IRFP140 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources