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PBSS4160PANP-QX
Discrete Semiconductor Products

PBSS4160PANP-QX

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Nexperia USA Inc.

60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR

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PBSS4160PANP-QX
Discrete Semiconductor Products

PBSS4160PANP-QX

Active
Nexperia USA Inc.

60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160PANP-QX
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce290, 170
Frequency - Transition125 MHz, 175 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]370 mW
QualificationAEC-Q101
Supplier Device Package6-HUSON (2x2)
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic340 mV, 220 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.24

Description

General part information

PBSS4160PANP-Q Series

NPN/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.